Specification	FGHL40T65MQDT

Current - Collector (Ic) (Max) [Max]	60 A
Gate Charge	80 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	238 W
Reverse Recovery Time (trr)	86 ns
Supplier Device Package	TO-247-3
Switching Energy	880 µJ, 490 µJ
Td (on/off) @ 25°C	18 ns, 75 ns
Test Condition	40 A, 15 V, 400 V, 6 Ohm
Vce(on) (Max) @ Vge, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max)	650 V

FGHL40T65MQDT Series

IGBT - 650 V 40 A FS4 medium switching speed IGBT with full rated copack diode

Part	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Gate Charge	Current - Collector (Ic) (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	IGBT Type	Power - Max [Max]	Supplier Device Package	Test Condition	Mounting Type	Reverse Recovery Time (trr)	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy
ON Semiconductor FGHL40T65MQDT	1.8 V	18 ns 75 ns	80 nC	60 A	TO-247-3	650 V	Trench Field Stop	238 W	TO-247-3	6 Ohm 15 V 40 A 400 V	Through Hole	86 ns	-55 °C	175 ░C	490 µJ 880 µJ

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.19
		10	$ 3.46
		100	$ 2.47
		500	$ 2.05
		1000	$ 1.99
ON Semiconductor	N/A	1	$ 1.83

Description

General part information

FGHL40T65MQDT Series

ON Semiconductor's series of field stop 4th generation IGBTs offer the optimum performance by balancing Vce(sat) and Eoff losses and well controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other hi performance power conversion applications.