FGHL40T65MQDT Series

IGBT - 650 V 40 A FS4 medium switching speed IGBT with full rated copack diode

Catalog

IGBT - 650 V 40 A FS4 medium switching speed IGBT with full rated copack diode

Part	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Gate Charge	Current - Collector (Ic) (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	IGBT Type	Power - Max [Max]	Supplier Device Package	Test Condition	Mounting Type	Reverse Recovery Time (trr)	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy
ON Semiconductor FGHL40T65MQDT	1.8 V	18 ns 75 ns	80 nC	60 A	TO-247-3	650 V	Trench Field Stop	238 W	TO-247-3	6 Ohm 15 V 40 A 400 V	Through Hole	86 ns	-55 °C	175 ░C	490 µJ 880 µJ

Catalog

IGBT - 650 V 40 A FS4 medium switching speed IGBT with full rated copack diode

Key Features

• Positive temperature co-efficient

• Low Vce(sat)

• Low Eon and Eoff

Description

ON Semiconductor's series of field stop 4th generation IGBTs offer the optimum performance by balancing Vce(sat) and Eoff losses and well controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other hi performance power conversion applications.