Specification	FGD3N60LSDTM

Current - Collector Pulsed (Icm)	25 A
Gate Charge	12.5 nC
Mounting Type	Surface Mount
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	40 W
Reverse Recovery Time (trr)	234 ns
Supplier Device Package	TO-252AA
Switching Energy	1 mJ, 250 µJ
Td (on/off) @ 25°C	600 ns
Td (on/off) @ 25°C	40 ns
Test Condition	470 Ohm, 3 A, 480 V, 10 V
Vce(on) (Max) @ Vge, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

FGD3N60LSD Series

IGBT, 600V, 3A, 1.2V, DPAK, Planar

Part	Power - Max [Max]	Mounting Type	Gate Charge	Current - Collector Pulsed (Icm)	Switching Energy	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Package / Case	Test Condition	Vce(on) (Max) @ Vge, Ic
ON Semiconductor FGD3N60LSDTM	40 W	Surface Mount	12.5 nC	25 A	1 mJ 250 µJ	TO-252AA	234 ns	600 V	600 ns	40 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 A 10 V 470 Ohm 480 V	1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

ON Semiconductor	N/A	1	$ 0.45

Description

General part information

FGD3N60LSD Series

ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.