Discrete Semiconductor Products

LSIC2SD120A20A

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LITTELFUSE

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 55 A, 125 NC, TO-220

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DocumentsDatasheet Product Change Notice EN

Discrete Semiconductor Products

LSIC2SD120A20A

Active

LITTELFUSE

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 55 A, 125 NC, TO-220

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	LSIC2SD120A20A

Capacitance @ Vr, F	1142 pF
Current - Average Rectified (Io)	54.5 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220-2L
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

LSIC2SD120A20A Series

SiC Schottky Diode 1200V 20A TO-220-2L

Part	Technology	Speed	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr
LITTELFUSE LSIC2SD120A20A	SiC (Silicon Carbide) Schottky	500 mA	54.5 A	0 ns	Through Hole	TO-220-2L	1.8 V	1.2 kV	TO-220-2	1142 pF	175 ░C	-55 °C	100 µA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 4.91	1m+
Newark	Each	1	$ 17.12	1m+
		5	$ 16.24
		10	$ 15.10
		25	$ 13.25
		100	$ 12.34
		500	$ 11.92
		1000	$ 11.04
TME	N/A	1	$ 21.04	<1d
		5	$ 18.96
		25	$ 16.76
		100	$ 15.03
		250	$ 13.99

Description

General part information

LSIC2SD120A20A Series

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.