Discrete Semiconductor Products
FDS6575
LTBON Semiconductor
MOSFET TRANSISTOR, P CHANNEL, -10 A, -20 V, 0.0085 OHM, -4.5 V, -600 MV ROHS COMPLIANT: YES
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Discrete Semiconductor Products
FDS6575
LTBON Semiconductor
MOSFET TRANSISTOR, P CHANNEL, -10 A, -20 V, 0.0085 OHM, -4.5 V, -600 MV ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDS6575 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 74 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4951 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) @ Id, Vgs | 13 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FDS6575 Series
This P-Channel 2.5V specified MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V).
Documents
Technical documentation and resources