Discrete Semiconductor Products
FDP4D5N10C
ActiveON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET, 100V, 128A, 4.5MΩ
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Discrete Semiconductor Products
FDP4D5N10C
ActiveON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET, 100V, 128A, 4.5MΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDP4D5N10C |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 128 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 68 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5065 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 2.4 W, 150 W |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Arrow | N/A | 1 | $ 2.55 | |
| Digikey | Tube | 1 | $ 6.52 | |
| 50 | $ 3.48 | |||
| 100 | $ 3.19 | |||
| 500 | $ 2.73 | |||
| Newark | Each | 500 | $ 2.91 | |
| ON Semiconductor | N/A | 1 | $ 2.52 | |
Description
General part information
FDP4D5N10C Series
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Documents
Technical documentation and resources