FDP4D5N10C Series

N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
ON Semiconductor FDP4D5N10C	2.4 W 150 W	128 A	100 V	20 V	Through Hole	TO-220-3	4 V	MOSFET (Metal Oxide)	4.5 mOhm	10 V	N-Channel	68 nC	5065 pF	-55 °C	175 ░C	TO-220-3

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ

Key Features

• Max RDS(on)= 4.5 mΩ at VGS= 10 V, ID= 128 A

• High Performance Trench Technology for Extremely Low RDS(on)

• Extremely Low Reverse Recovery Charge, Qrr

• Low Gate Charge, QG= 48nC ( Typ.)

• High Power and Current Handling Capability

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.