Discrete Semiconductor Products

1N4005T-G

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DIODE GEN PURP 600V 1A DO41

Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N4005T-G

Capacitance	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	Axial, DO-204AL, DO-41
Package Name	DO-41
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	600 V
Voltage - Forward (Vf) (Max)	1.1 V

Part	Package Name	Capacitance	Current - Reverse Leakage	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Voltage - Forward (Vf) (Max)	Voltage - DC Reverse (Vr) (Max)	Package / Case	Mounting Type	Current - Average Rectified (Io)	Technology	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time
Comchip Technology 1N4005-G	DO-41	15 pF	5 µA	150 °C	-55 °C	1.1 V	600 V	Axial DO-204AL DO-41	Through Hole	1 A	Standard	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns
Comchip Technology 1N4005B-G	DO-41	15 pF	5 µA	150 °C	-55 °C	1.1 V	600 V	Axial DO-204AL DO-41	Through Hole	1 A	Standard	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns
Comchip Technology 1N4005T-G	DO-41	15 pF	5 µA	150 °C	-55 °C	1.1 V	600 V	Axial DO-204AL DO-41	Through Hole	1 A	Standard	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Diode 600 V 1A Through Hole DO-41

Technical documentation and resources

No documents available