Discrete Semiconductor Products

1N4005-G

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DIODE 600V 1A 2-PIN DO-41 AMMO

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Discrete Semiconductor Products

Active

DIODE 600V 1A 2-PIN DO-41 AMMO

Technical Specifications

Parameters and characteristics for this part

Specification	1N4005-G

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, Axial, DO-41
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Supplier Device Package	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Mounting Type	Current - Average Rectified (Io)	Technology	Speed [Min]
Comchip Technology 1N4005-G	DO-41	15 pF	5 µA	-55 °C	150 °C	1.1 V	600 V	Axial DO-204AL DO-41	Through Hole	1 A	Standard	200 mA 500 ns
Comchip Technology 1N4005B-G	DO-41	15 pF	5 µA	-55 °C	150 °C	1.1 V	600 V	Axial DO-204AL DO-41	Through Hole	1 A	Standard	200 mA 500 ns
Comchip Technology 1N4005T-G	DO-41	15 pF	5 µA	-55 °C	150 °C	1.1 V	600 V	Axial DO-204AL DO-41	Through Hole	1 A	Standard	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

DIODE 600V 1A 2-PIN DO-41 AMMO

Technical documentation and resources

No documents available