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SG6858TZ
Discrete Semiconductor Products

FDC3612_F095

Obsolete
ON Semiconductor

MOSFET N-CH 100V 2.6A SUPERSOT6

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SG6858TZ
Discrete Semiconductor Products

FDC3612_F095

Obsolete
ON Semiconductor

MOSFET N-CH 100V 2.6A SUPERSOT6

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFDC3612_F095
Current - Continuous Drain (Id) @ 25°C2.6 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [x]20 nC
Input Capacitance (Ciss) (Max) @ Vds660 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs125 mOhm
Supplier Device PackageSuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FDC3612 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.

Documents

Technical documentation and resources