FDC3612 Series

N-Channel PowerTrench® MOSFET 100V 2.6A, 125mΩ

Catalog

N-Channel PowerTrench® MOSFET 100V 2.6A, 125mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [x]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	FET Type	Mounting Type	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDC3612	660 pF	20 nC	-55 °C	150 °C	4 V	SOT-23-6 Thin TSOT-23-6	SuperSOT™-6	N-Channel	Surface Mount	20 V	MOSFET (Metal Oxide)	125 mOhm	2.6 A	100 V	6 V 10 V
ON Semiconductor FDC3612_F095	660 pF	20 nC	-55 °C	150 °C	4 V	SOT-23-6 Thin TSOT-23-6	SuperSOT™-6	N-Channel	Surface Mount	20 V	MOSFET (Metal Oxide)	125 mOhm	2.6 A	100 V	6 V 10 V

Catalog

N-Channel PowerTrench® MOSFET 100V 2.6A, 125mΩ

Key Features

• 2.6 A, 100 V

• RDS(on)= 125 mΩ@ VGS= 10 V

• RDS(on)= 135 mΩ @ VGS= 6 V

• High performance trench technology for extremely low RDS(ON)

• Low gate charge (14nC typical)

• High power and current handling capability

• Fast switching speed

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.