Specification	FCPF11N60

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	1490 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	36 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FCPF11N60NT Series

Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220F

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
ON Semiconductor FCPF11N65_G
ON Semiconductor FCPF11N60	5 V	TO-220F-3	30 V	600 V	36 W	10 V	-55 °C	150 °C	11 A	380 mOhm	52 nC	1490 pF	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole
ON Semiconductor FCPF11N60NT	4 V	TO-220F-3	30 V	600 V		10 V	-55 °C	150 °C	10.8 A	299 mOhm		1505 pF	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole	35.6 nC	32.1 W
ON Semiconductor FCPF11N60T	5 V	TO-220F-3	30 V	600 V	36 W	10 V	-55 °C	150 °C	11 A	380 mOhm	52 nC	1490 pF	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole
ON Semiconductor FCPF11N60NT	4 V	TO-220F-3	30 V	600 V		10 V	-55 °C	150 °C	10.8 A	299 mOhm		1505 pF	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole	35.6 nC	32.1 W
ON Semiconductor FCPF11N60F	5 V	TO-220F-3	30 V	600 V	36 W	10 V	-55 °C	150 °C	11 A	380 mOhm	52 nC	1490 pF	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole
ON Semiconductor FCPF11N60	5 V	TO-220F-3	30 V	600 V	36 W	10 V	-55 °C	150 °C	11 A	380 mOhm	52 nC	1490 pF	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	175	$ 1.72
		175	$ 1.72
	Tube	1	$ 4.18
		1	$ 4.18
		10	$ 2.76
		10	$ 2.76
		100	$ 1.95
		100	$ 1.95
		500	$ 1.60
		500	$ 1.60
		1000	$ 1.49
		1000	$ 1.49
		2000	$ 1.49
		2000	$ 1.49
Newark	Each	1	$ 3.67
		10	$ 3.66
		25	$ 3.19
		50	$ 2.70
		100	$ 2.60
		250	$ 2.53
		500	$ 2.45
ON Semiconductor	N/A	1	$ 1.59

Description

General part information

FCPF11N60NT Series

SuperFET®MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Super-FET FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

Documents

Technical documentation and resources

FCPF11N60

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FCPF11N60

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Technical Specifications

FCPF11N60NT Series

Pricing

Description

FCPF11N60NT Series

Documents

Technical Data Sheet EN

Product Change Notice EN

Datasheet

Datasheet

Package Drawing-221AT-TO-220 Fullpack, 3-Lead / TO-220F-3FG

FCPF11N60NT Series