FCPF11N60NT Series

Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220F

Catalog

Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220F

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
ON Semiconductor FCPF11N65_G
ON Semiconductor FCPF11N60	5 V	TO-220F-3	30 V	600 V	36 W	10 V	-55 °C	150 °C	11 A	380 mOhm	52 nC	1490 pF	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole
ON Semiconductor FCPF11N60NT	4 V	TO-220F-3	30 V	600 V		10 V	-55 °C	150 °C	10.8 A	299 mOhm		1505 pF	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole	35.6 nC	32.1 W
ON Semiconductor FCPF11N60T	5 V	TO-220F-3	30 V	600 V	36 W	10 V	-55 °C	150 °C	11 A	380 mOhm	52 nC	1490 pF	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole
ON Semiconductor FCPF11N60NT	4 V	TO-220F-3	30 V	600 V		10 V	-55 °C	150 °C	10.8 A	299 mOhm		1505 pF	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole	35.6 nC	32.1 W
ON Semiconductor FCPF11N60F	5 V	TO-220F-3	30 V	600 V	36 W	10 V	-55 °C	150 °C	11 A	380 mOhm	52 nC	1490 pF	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole
ON Semiconductor FCPF11N60	5 V	TO-220F-3	30 V	600 V	36 W	10 V	-55 °C	150 °C	11 A	380 mOhm	52 nC	1490 pF	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole

Catalog

Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220F

Key Features

• 600 V @ TJ= 150°C

• Typ. RDS(on)= 320 mΩ

• Fast Recovery Type (trr= 120 ns)

• Ultra Low Gate Charge (Typ. Qg= 40 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 95 pF)

• 100% Avalanche Tested

• RoHS compliant

Description

SuperFET®MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Super-FET FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.