Discrete Semiconductor Products

PMH400UNEH

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MOSFET N-CH 30V 900MA DFN0606-3

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Discrete Semiconductor Products

Active

MOSFET N-CH 30V 900MA DFN0606-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMH400UNEH

Current - Continuous Drain (Id) @ 25°C	900 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.93 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	2.23 W, 360 mW
Rds On (Max) @ Id, Vgs	460 mOhm
Supplier Device Package	DFN0606-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type
Freescale Semiconductor - NXP PMH400UNEH	8 V	-55 °C	150 °C	MOSFET (Metal Oxide)	0.93 nC	4540 pF	1.5 V 4.5 V	460 mOhm	3-XFDFN	30 V	950 mV	Surface Mount	2.23 W 360 mW	DFN0606-3	900 mA	N-Channel

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General part information

N-Channel 30 V 900mA (Ta) 360mW (Ta), 2.23W (Tc) Surface Mount DFN0606-3

Technical documentation and resources