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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | FET Type | Supplier Device Package | Power Dissipation (Max) | Power Dissipation (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Vgs (Max) [Max] | Vgs(th) (Max) @ Id | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | N-Channel | DFN0606-3 | 360 mW | 2.23 W | Surface Mount | 4540 pF | 3-XFDFN | 8 V | 950 mV | MOSFET (Metal Oxide) | 150 °C | -55 °C | 1.5 V 4.5 V | 0.93 nC | 900 mA | 30 V | 460 mOhm |