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Discrete Semiconductor Products

2N3635UB/TR

Active
Microchip Technology

140 V SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

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UB
Discrete Semiconductor Products

2N3635UB/TR

Active
Microchip Technology

140 V SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N3635UB/TR
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]10 µA
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Power - Max [Max]1 W
Supplier Device PackageUB
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max)140 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 100$ 13.21
Microchip DirectN/A 1$ 14.22
NewarkEach (Supplied on Full Reel) 100$ 13.21
500$ 12.70

Description

General part information

2N3635UB-Transistor Series

This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC).

Documents

Technical documentation and resources