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Discrete Semiconductor Products

CSD25304W1015T

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Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET SINGLE WLP 1 MM X 1.5 MM, 32.5 MOHM

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DSBGA (YZC)
Discrete Semiconductor Products

CSD25304W1015T

Active
Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET SINGLE WLP 1 MM X 1.5 MM, 32.5 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD25304W1015T
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]4.4 nC
Input Capacitance (Ciss) (Max) @ Vds595 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseDSBGA, 6-UFBGA
Power Dissipation (Max)750 mW
Rds On (Max) @ Id, Vgs32.5 mOhm
Supplier Device Package6-DSBGA (1x1.5)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1.15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.11
10$ 0.91
100$ 0.71
Digi-Reel® 1$ 1.11
10$ 0.91
100$ 0.71
Tape & Reel (TR) 250$ 0.70
500$ 0.60
1250$ 0.49
2500$ 0.46
6250$ 0.44
12500$ 0.42
Texas InstrumentsSMALL T&R 1$ 0.96
100$ 0.65
250$ 0.50
1000$ 0.33

Description

General part information

CSD25304W1015 Series

This 27 mΩ, –20 V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1.0 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.

This 27 mΩ, –20 V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1.0 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.