Discrete Semiconductor Products

SIHP050N60E-GE3

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MOSFET N-CH 600V 51A TO220AB

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Discrete Semiconductor Products

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MOSFET N-CH 600V 51A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP050N60E-GE3

Current - Continuous Drain (Id) @ 25°C	51 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds	3459 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	278 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max)	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIHP050N60E-GE3	51 A	Through Hole	30 V	3459 pF	10 V	TO-220AB	-55 °C	150 °C	130 nC	MOSFET (Metal Oxide)	278 W	TO-220-3	5 V	50 mOhm	N-Channel	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 51A (Tc) 278W (Tc) Through Hole TO-220AB

Technical documentation and resources