SIHP050 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 51A TO220AB
| Part | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Power Dissipation (Max) | Package / Case | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | FET Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 51 A | Through Hole | 30 V | 3459 pF | 10 V | TO-220AB | -55 °C | 150 °C | 130 nC | MOSFET (Metal Oxide) | 278 W | TO-220-3 | 5 V | 50 mOhm | N-Channel | 600 V |