Specification	FDD4685-F085

Current - Continuous Drain (Id) @ 25°C	8.4 A, 32 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	83 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	27 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDD4685_F085 Series

P-Channel PowerTrench® MOSFET, -40 V, -32 A, 35 mΩ

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Qualification	Power Dissipation (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type
ON Semiconductor FDD4685-F085	40 V	4.5 V 10 V	8.4 A 32 A	Automotive	27 nC	27 mOhm	2380 pF	P-Channel	TO-252AA	3 V	MOSFET (Metal Oxide)	AEC-Q101	83 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	20 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel PowerTrench®MOSFET, -40 V, -32 A, 35 mΩ

Technical documentation and resources