FDD4685_F085 Series

P-Channel PowerTrench® MOSFET, -40 V, -32 A, 35 mΩ

Catalog

P-Channel PowerTrench® MOSFET, -40 V, -32 A, 35 mΩ

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Qualification	Power Dissipation (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type
ON Semiconductor FDD4685-F085	40 V	4.5 V 10 V	8.4 A 32 A	Automotive	27 nC	27 mOhm	2380 pF	P-Channel	TO-252AA	3 V	MOSFET (Metal Oxide)	AEC-Q101	83 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	20 V	Surface Mount

P-Channel PowerTrench® MOSFET, -40 V, -32 A, 35 mΩ

• Typ rDS(on)= 23mΩ at VGS= -10V, ID= -8.4A

• Typ rDS(on)= 30mΩ at VGS= -4.5V, ID= -7A

• Typ Qg(TOT)= 19nC at VGS= -5V

• High performance trench technology for extremely low rDS(on)

• RoHS Compliant

• Qualified to AEC Q101

P-Channel PowerTrench®MOSFET, -40 V, -32 A, 35 mΩ