Discrete Semiconductor Products
STF100N6F7
ActiveSTMicroelectronics
N-CHANNEL 60 V, 4.6 MOHM TYP., 46 A STRIPFET F7 POWER MOSFET IN A TO-220FP PACKAGE
Discrete Semiconductor Products
STF100N6F7
ActiveSTMicroelectronics
N-CHANNEL 60 V, 4.6 MOHM TYP., 46 A STRIPFET F7 POWER MOSFET IN A TO-220FP PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STF100N6F7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 46 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1980 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 25 W |
| Rds On (Max) @ Id, Vgs | 5.6 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STF100 Series
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources
