STW48N60DM2
ActiveN-CHANNEL 600 V, 0.065 OHM TYP., 40 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE
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STW48N60DM2
ActiveN-CHANNEL 600 V, 0.065 OHM TYP., 40 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STW48N60DM2 |
|---|---|
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) @ Id, Vgs | 79 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 402 | $ 5.29 | |
Description
General part information
STW48N60DM2 Series
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources