Texas Instruments-CSD17575Q3T MOSFETs Trans MOSFET N-CH Si 30V 60A 8-Pin VSON-CLIP EP T/R

Discrete Semiconductor Products

CSD16340Q3T

Active

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 5.5 MOHM

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsSemiconductor and IC Package Thermal Metrics (Rev. D)Ringing Reduction Techniques for NexFET High Performance MOSFETs +8

Discrete Semiconductor Products

CSD16340Q3T

Active

Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 5.5 MOHM

Deep-Dive with AI

DocumentsSemiconductor and IC Package Thermal Metrics (Rev. D)Ringing Reduction Techniques for NexFET High Performance MOSFETs +8

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CSD16340Q3T

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	3 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	8-VSON-CLIP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1.1 V

CSD16340Q3 Series

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm

Part	Power Dissipation (Max) [Max]	Technology	Vgs (Max) [Max]	Vgs (Max) [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Texas Instruments CSD16340Q3T	3 W	MOSFET (Metal Oxide)	10 V	-8 V	1350 pF	25 V	4.5 mOhm	1.1 V	8-PowerTDFN	N-Channel	2.5 V	8 V	9.2 nC	8-VSON-CLIP (3.3x3.3)	-55 °C	150 °C	Surface Mount	60 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.43
		10	$ 1.17
		100	$ 0.91
	Digi-Reel®	1	$ 1.43
		10	$ 1.17
		100	$ 0.91
	Tape & Reel (TR)	250	$ 0.61
		500	$ 0.52
		1250	$ 0.52
Texas Instruments	SMALL T&R	1	$ 1.06
		100	$ 0.81
		250	$ 0.60
		1000	$ 0.43

Description

General part information

CSD16340Q3 Series

This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.

Documents

Technical documentation and resources

CSD16340Q3T

Deep-Dive with AI

CSD16340Q3T

Deep-Dive with AI

Technical Specifications

CSD16340Q3 Series

Pricing

Description

CSD16340Q3 Series

Documents

Semiconductor and IC Package Thermal Metrics (Rev. D)

Ringing Reduction Techniques for NexFET High Performance MOSFETs

Using MOSFET Safe Operating Area Curves in Your Design

Tips for Successfully Paralleling Power MOSFETs

MOSFET Support and Training Tools (Rev. F)

Using MOSFET Transient Thermal Impedance Curves In Your Design

QFN and SON PCB Attachment (Rev. C)

CSD16340Q3 25-V N-Channel NexFET Power MOSFET datasheet (Rev. E)

Power Management Guide 2018 (Rev. R)

Avoid Common Mistakes When Selecting And Designing With Power MOSFETs

CSD16340Q3 Series