CSD16340Q3 Series

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm

Part	Power Dissipation (Max) [Max]	Technology	Vgs (Max) [Max]	Vgs (Max) [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Texas Instruments CSD16340Q3T	3 W	MOSFET (Metal Oxide)	10 V	-8 V	1350 pF	25 V	4.5 mOhm	1.1 V	8-PowerTDFN	N-Channel	2.5 V	8 V	9.2 nC	8-VSON-CLIP (3.3x3.3)	-55 °C	150 °C	Surface Mount	60 A

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm

Key Features

• Optimized for 5 V Gate DriveResistance Rated at VGS=2.5 VUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm PlasticPackageAPPLICATIONSPoint of Load SynchronousBuck Converter for Applicationsin Networking, Telecom, andComputing SystemsOptimized for Controlor Synchronous FETApplicationsOptimized for 5 V Gate DriveResistance Rated at VGS=2.5 VUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm PlasticPackageAPPLICATIONSPoint of Load SynchronousBuck Converter for Applicationsin Networking, Telecom, andComputing SystemsOptimized for Controlor Synchronous FETApplications

Description

This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications. This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.