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TO-39
Discrete Semiconductor Products

JANTX2N5681

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Microchip Technology

TRANS GP BJT NPN 100V 1A 1000MW 3-PIN TO-39 BAG

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TO-39
Discrete Semiconductor Products

JANTX2N5681

Active
Microchip Technology

TRANS GP BJT NPN 100V 1A 1000MW 3-PIN TO-39 BAG

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N5681
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature [Max]200 °C
Operating Temperature [Min]-65 ░C
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]1 W
QualificationMIL-PRF-19500/583
Supplier Device PackageTO-39
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 24.66
Microchip DirectN/A 1$ 26.56

Description

General part information

JANTX2N5681-Transistor Series

This specification covers the performance requirements for NPN, silicon, amplifier, 2N5681 and 2N5682 transistors Complimentary to the 2N5679 and 2N5680 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device as specified in MIL-PRF-19500/583 and two levels of product assurance (JANHC and JANKC) are provided for unencapsulated devices.

Documents

Technical documentation and resources