Specification	NTLJD3115PT1G

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Input Capacitance (Ciss) (Max) @ Vds	531 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	710 mW
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	6-WDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

NTLJD3115P Series

Dual P-Channel Power MOSFET -20V -4.1A 100mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Configuration	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature
ON Semiconductor NTLJD3115PT1G	2.3 A	-55 °C	150 °C	100 mOhm	531 pF	1 V	6-WDFN (2x2)	MOSFET (Metal Oxide)	Surface Mount	20 V	2 P-Channel	710 mW	6.2 nC	Logic Level Gate

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET -20 V, -4.1 A, µCool™ Dual P-Channel, 2x2 mm WDFN Package

Technical documentation and resources