NTLJD3115P Series

Dual P-Channel Power MOSFET -20V -4.1A 100mΩ

Catalog

Dual P-Channel Power MOSFET -20V -4.1A 100mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Configuration	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature
ON Semiconductor NTLJD3115PT1G	2.3 A	-55 °C	150 °C	100 mOhm	531 pF	1 V	6-WDFN (2x2)	MOSFET (Metal Oxide)	Surface Mount	20 V	2 P-Channel	710 mW	6.2 nC	Logic Level Gate

Dual P-Channel Power MOSFET -20V -4.1A 100mΩ

• WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction

• 2x2 mm Footprint Same as SC-88

• Lowest RDS(on)Solution in 2x2 mm Package

• 1.8 V RDS(on)Rating for Operation at Low Voltage Gate Drive Logic Level

• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

• Bidirectional Current Flow with Common Source Configuration

Power MOSFET -20 V, -4.1 A, µCool™ Dual P-Channel, 2x2 mm WDFN Package