Discrete Semiconductor Products

PSMN027-100PS,127

Obsolete

MOSFET N-CH 100V 37A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 37A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN027-100PS,127

Current - Continuous Drain (Id) @ 25°C	37 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1624 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	103 W
Rds On (Max) @ Id, Vgs	26.8 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)
Freescale Semiconductor - NXP PSMN027-100PS,127	TO-220-3	37 A	MOSFET (Metal Oxide)	1624 pF	TO-220AB	N-Channel	Through Hole	30 nC	-55 °C	175 ░C	26.8 mOhm	10 V	100 V	103 W	20 V
Freescale Semiconductor - NXP PSMN027-100BS,118	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	37 A	MOSFET (Metal Oxide)	1624 pF	D2PAK	N-Channel	Surface Mount	30 nC	-55 °C	175 ░C	26.8 mOhm	10 V	100 V	103 W	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 37A (Tc) 103W (Tc) Through Hole TO-220AB

Technical documentation and resources