Discrete Semiconductor Products

2N2907A

Obsolete

TRANS PNP 60V 0.6A TO18

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Discrete Semiconductor Products

Obsolete

TRANS PNP 60V 0.6A TO18

Technical Specifications

Parameters and characteristics for this part

Specification	2N2907A

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-206AA, TO-18-3 Metal Can
Power - Max [Max]	400 mW
Supplier Device Package	TO-18
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Operating Temperature	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Transistor Type
STMicroelectronics 2N2907A	10 nA	400 mW	TO-18	60 V	1.6 V	TO-18-3 Metal Can TO-206AA	100 hFE	Through Hole	175 °C	200 MHz	600 mA	PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 400 mW Through Hole TO-18

Technical documentation and resources