MO-9200AE-D5E-HE100M000000

LTB

MEMS BASED XO +2.5 VDC +/-5% LVD

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Crystals, Oscillators, Resonators

LTB

MEMS BASED XO +2.5 VDC +/-5% LVD

Technical Specifications

Parameters and characteristics for this part

Specification	MO-9200AE-D5E-HE100M000000

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MEMS based XO

Part	Frequency Stability	Mounting Type	Size / Dimension [x]	Size / Dimension [y]	Size / Dimension [y]	Size / Dimension [x]	Base Resonator	Operating Temperature [Max]	Operating Temperature [Min]	Height - Seated (Max) [Max] [z]	Height - Seated (Max) [Max] [z]	Output	Package / Case	Type	Frequency	Current - Supply (Disable) (Max) [Max]	Current - Supply (Max) [Max]	Function	Voltage - Supply
Microchip Technology MO-9200AE-C1E-HE156M250000
Microchip Technology MO-9200AE-D3K-EE-100M000000	50 ppm	Surface Mount	0.197 in	0.126 "	3.2 mm	5 mm	MEMS	85 °C	-40 °C	0.8 mm	0.031 "	LVDS	6-SMD No Lead	XO (Standard)	100 MHz	35 mA	69 mA	Enable/Disable	3.3 V
Microchip Technology MO-9200AE-D3K-EE125M000000
Microchip Technology MO-9200AE-D5E-HE100M000000
Microchip Technology MO-9200AE-D3E-HE87M3515420
Microchip Technology MO-9200AE-D3K-EE148M500000
Microchip Technology MO-9200AE-C3K-EE125M000000
Microchip Technology MO-9200AE-D5E-EE100M000000	20 ppm	Surface Mount	0.126 in	0.098 in	2.5 mm	3.2 mm	MEMS	85 °C	-40 °C	0.8 mm	0.031 "	LVDS	6-SMD No Lead	XO (Standard)	100 MHz	35 mA	69 mA	Enable/Disable	3.3 V
Microchip Technology MO-9200AE-D5F-EE150M000000

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General part information

MEMS based XO

Technical documentation and resources

No documents available