Specification	NTMFS002P03P8ZT1G

Current - Continuous Drain (Id) @ 25°C	40.2 A, 263 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	217 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	14950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	3.3 W, 138.9 W
Rds On (Max) @ Id, Vgs [Max]	1.4 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3 V

NTMFS002P03P8Z Series

MOSFET, Power -30V P-Channel, SO-8FL

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor NTMFS002P03P8ZT1G	40.2 A 263 A	1.4 mOhm	3 V	Surface Mount	5-DFN (5x6)	8-SOFL	217 nC	P-Channel	3.3 W 138.9 W	4.5 V 10 V	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)	25 V	8-PowerTDFN 5 Leads	14950 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET, Power -30V P-Channel, 1.7mΩ @10V, 226A, SO-8FL Package

Technical documentation and resources