Catalog
MOSFET, Power -30V P-Channel, SO-8FL
Key Features
• Ultra Low RDS(on)
• Advanced Package Technology in 5x6mm
• Pb−Free and Halogen Free/BFR Free
Description
AI
MOSFET, Power -30V P-Channel, 1.7mΩ @10V, 226A, SO-8FL Package
Beta
⌘K
MOSFET, Power -30V P-Channel, SO-8FL
MOSFET, Power -30V P-Channel, SO-8FL
| Part | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Mounting Type | Supplier Device Package | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | FET Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs (Max) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 40.2 A 263 A | 1.4 mOhm | 3 V | Surface Mount | 5-DFN (5x6) | 8-SOFL | 217 nC | P-Channel | 3.3 W 138.9 W | 4.5 V 10 V | 30 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 25 V | 8-PowerTDFN 5 Leads | 14950 pF |