Specification	FDC6318P

Configuration	2 P-Channel
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	8 nC
Input Capacitance (Ciss) (Max) @ Vds	455 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	700 mW
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

FDC6318P Series

Dual P-Channel PowerTrench<sup>®</sup> MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ

Part	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Package / Case	Mounting Type	Supplier Device Package	Power - Max [Max]	FET Feature
ON Semiconductor FDC6318P	MOSFET (Metal Oxide)	12 V	-55 °C	150 °C	1.5 V	8 nC	90 mOhm	455 pF	2 P-Channel	SOT-23-6 Thin TSOT-23-6	Surface Mount	SuperSOT™-6	700 mW	Logic Level Gate

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.85
		10	$ 0.73
		100	$ 0.51
		500	$ 0.42
		1000	$ 0.36
	Digi-Reel®	1	$ 0.85
		10	$ 0.73
		100	$ 0.51
		500	$ 0.42
		1000	$ 0.36
	Tape & Reel (TR)	3000	$ 0.32
		6000	$ 0.30
		9000	$ 0.28
		30000	$ 0.28
Newark	Each (Supplied on Cut Tape)	1	$ 0.75
		10	$ 0.69
		25	$ 0.62
		50	$ 0.56
		100	$ 0.49
		250	$ 0.44
		500	$ 0.38
		1000	$ 0.35
ON Semiconductor	N/A	1	$ 0.26

Description

General part information

FDC6318P Series

These P-Channel 1.8V specified MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.