NGTD23T120F2SWK

Obsolete

ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

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Discrete Semiconductor Products

NGTD23T120F2SWK

Obsolete

ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NGTD23T120F2SWK

Current - Collector Pulsed (Icm)	120 A
IGBT Type	Trench Field Stop
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	Die
Supplier Device Package	Die
Vce(on) (Max) @ Vge, Ic	2.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

NGTD23T120F2 Series

IGBT 1200V 25A FS2 bare die

Part	Supplier Device Package	IGBT Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic
ON Semiconductor NGTD23T120F2SWK	Die	Trench Field Stop	Surface Mount	1200 V	-55 °C	175 ░C	Die	120 A	2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NGTD23T120F2 Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss.

Documents

Technical documentation and resources