NGTD23T120F2 Series

IGBT 1200V 25A FS2 bare die

Catalog

IGBT 1200V 25A FS2 bare die

Part	Supplier Device Package	IGBT Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic
ON Semiconductor NGTD23T120F2SWK	Die	Trench Field Stop	Surface Mount	1200 V	-55 °C	175 ░C	Die	120 A	2.2 V

Catalog

IGBT 1200V 25A FS2 bare die

Key Features

• Extremely Efficient Trench with Field Stop Technology

• TJmax = 175°C

• Optimized for High Speed Switching

• 10 µs Short Circuit Capability

• These are Pb−Free Devices

Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss.