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ONSEMI HUF75652G3
Discrete Semiconductor Products

HUF75345G3

Active
ON Semiconductor

POWER MOSFET, GENERAL PURPOSE, N CHANNEL, 55 V, 75 A, 0.007 OHM, TO-247, THROUGH HOLE

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ONSEMI HUF75652G3
Discrete Semiconductor Products

HUF75345G3

Active
ON Semiconductor

POWER MOSFET, GENERAL PURPOSE, N CHANNEL, 55 V, 75 A, 0.007 OHM, TO-247, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationHUF75345G3
Current - Continuous Drain (Id) @ 25°C75 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]275 nC
Input Capacitance (Ciss) (Max) @ Vds4000 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)325 W
Rds On (Max) @ Id, Vgs7 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.24
30$ 3.36
120$ 2.88
510$ 2.56
1020$ 2.19
2010$ 2.07
5010$ 1.98
NewarkEach 250$ 2.62
ON SemiconductorN/A 1$ 2.11

Description

General part information

HUF75345G3 Series

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.