HUF75345G3 Series

N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ

Catalog

N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ

Part	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor HUF75345P3	TO-220-3	N-Channel	7 mOhm	-55 °C	175 ░C	Through Hole	4 V	275 nC	MOSFET (Metal Oxide)	55 V	10 V	325 W	20 V	75 A	TO-220-3	4000 pF
ON Semiconductor HUF75345G3	TO-247-3	N-Channel	7 mOhm	-55 °C	175 ░C	Through Hole	4 V	275 nC	MOSFET (Metal Oxide)	55 V	10 V	325 W	20 V	75 A	TO-247-3	4000 pF

Catalog

N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ

Key Features

• 75A, 55V

• Temperature Compensated PSPICE®and SABER™ Models

• Thermal Impedance SPICE and SABER Models

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature- TB334, "Guidelines for Soldering Surface MountComponents to PC Boards"

Description

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.