
NCV51705MNTWG
ActiveAUTOMOTIVE SIC MOSFET DRIVER, LOW-SIDE, SINGLE 6 A HIGH-SPEED
Deep-Dive with AI
Search across all available documentation for this part.

NCV51705MNTWG
ActiveAUTOMOTIVE SIC MOSFET DRIVER, LOW-SIDE, SINGLE 6 A HIGH-SPEED
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NCV51705MNTWG |
|---|---|
| Channel Type | Single |
| Current - Peak Output (Source, Sink) [custom] | 6 A |
| Current - Peak Output (Source, Sink) [custom] | 6 A |
| Driven Configuration | Low-Side |
| Gate Type | SiC MOSFET |
| Grade | Automotive |
| Input Type | Non-Inverting, Inverting |
| Logic Voltage - VIL, VIH [custom] | 1.2 V |
| Logic Voltage - VIL, VIH [custom] | 1.6 V |
| Mounting Type | Wettable Flank, Surface Mount |
| Number of Drivers | 1 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 24-VFQFN Exposed Pad |
| Qualification | AEC-Q100 |
| Rise / Fall Time (Typ) [custom] | 8 ns |
| Rise / Fall Time (Typ) [custom] | 8 ns |
| Supplier Device Package | 24-QFNW (4x4) |
| Voltage - Supply [Max] | 22 V |
| Voltage - Supply [Min] | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 4.12 | |
| 10 | $ 3.46 | |||
| 100 | $ 2.80 | |||
| 500 | $ 2.49 | |||
| 1000 | $ 2.13 | |||
| Digi-Reel® | 1 | $ 4.12 | ||
| 10 | $ 3.46 | |||
| 100 | $ 2.80 | |||
| 500 | $ 2.49 | |||
| 1000 | $ 2.13 | |||
| Tape & Reel (TR) | 3000 | $ 2.00 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 5.13 | |
| 10 | $ 3.49 | |||
| 25 | $ 3.31 | |||
| 50 | $ 2.90 | |||
| 100 | $ 2.50 | |||
| 250 | $ 2.31 | |||
| 500 | $ 2.11 | |||
| 1000 | $ 2.01 | |||
| ON Semiconductor | N/A | 1 | $ 1.77 | |
Description
General part information
NCV51705 Series
The NCV51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCV51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.For isolated applications, the NCV51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high speed opto isolators.
Documents
Technical documentation and resources