NCV51705 Series

Automotive SiC MOSFET Driver, Low-Side, Single 6 A High-Speed

Catalog

Automotive SiC MOSFET Driver, Low-Side, Single 6 A High-Speed

Part	Driven Configuration	Supplier Device Package	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Qualification	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Channel Type	Package / Case	Grade	Input Type	Number of Drivers	Gate Type	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]
ON Semiconductor NCV51705MNTWG	Low-Side	24-QFNW (4x4)	6 A	6 A	AEC-Q100	Surface Mount Wettable Flank	8 ns	8 ns	-40 °C	125 °C	Single	24-VFQFN Exposed Pad	Automotive	Inverting Non-Inverting	1	SiC MOSFET	1.2 V	1.6 V	22 V	10 VDC

Catalog

Automotive SiC MOSFET Driver, Low-Side, Single 6 A High-Speed

Key Features

• High Peak Output Current with Split Output Stages

• Extended Positive Voltage Rating up to 28 V Max

• User−adjustable Built−in Negative Charge Pump (-3.3 V to -8 V)

• Accessible 5 V Reference / Bias Rail

• Adjustable Under−Voltage Lockout

• Fast Desaturation Function

• QFN24 Package 4 x 4 mm

• AEC-Qualifiied

Description

The NCV51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCV51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.For isolated applications, the NCV51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high speed opto isolators.