FDMD8430

Obsolete

ON Semiconductor

DUAL N-CHANNEL POWERTRENCH® MOSFET, 30V, 28A, 2.12MΩ

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-483AU-PQFN8 3.30x5.00x0.75, 0.65P +1

Discrete Semiconductor Products

FDMD8430

Obsolete

ON Semiconductor

DUAL N-CHANNEL POWERTRENCH® MOSFET, 30V, 28A, 2.12MΩ

Deep-Dive with AI

DocumentsDatasheet Package Drawing-483AU-PQFN8 3.30x5.00x0.75, 0.65P +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDMD8430

Configuration	2 N-Channel (Dual) Common Source
Current - Continuous Drain (Id) @ 25°C	95 A
Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	90 nC
Input Capacitance (Ciss) (Max) @ Vds	5035 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	2.1 W, 29 W
Rds On (Max) @ Id, Vgs	2.12 mOhm
Supplier Device Package	8-PQFN (3.3x5)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

FDMD8430 Series

Dual N-Channel PowerTrench® MOSFET, 30V, 28A, 2.12mΩ

Part	Drain to Source Voltage (Vdss)	Power - Max	Technology	Configuration	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type
ON Semiconductor FDMD8430	30 V	2.1 W 29 W	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Source	8-PowerWDFN	90 nC	-55 °C	150 °C	2.12 mOhm	8-PQFN (3.3x5)	5035 pF	95 A	28 A	3 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMD8430 Series

This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. It provides a very small footprint (3.3 x 5 mm) for higher power density.