FDMD8430 Series

Dual N-Channel PowerTrench® MOSFET, 30V, 28A, 2.12mΩ

Catalog

Dual N-Channel PowerTrench® MOSFET, 30V, 28A, 2.12mΩ

Part	Drain to Source Voltage (Vdss)	Power - Max	Technology	Configuration	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type
ON Semiconductor FDMD8430	30 V	2.1 W 29 W	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Source	8-PowerWDFN	90 nC	-55 °C	150 °C	2.12 mOhm	8-PQFN (3.3x5)	5035 pF	95 A	28 A	3 V	Surface Mount

Catalog

Dual N-Channel PowerTrench® MOSFET, 30V, 28A, 2.12mΩ

Key Features

• Max rDS(on)= 2.12 mΩ at VGS= 10 V, ID= 28 A

• Max rDS(on)= 2.95 mΩ at VGS= 4.5 V, ID= 24 A

• Ideal for Flexible Layout in Secondary Side Synchronous Rectification

• 100% UIL Tested

• Termination is Lead-free and RoHS compliant

Description

This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. It provides a very small footprint (3.3 x 5 mm) for higher power density.