VP2206N3-G-P003
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V, 0.9 OHM 3 TO-92 T/R ROHS COMPLIANT: YES
Deep-Dive with AI
Search across all available documentation for this part.
VP2206N3-G-P003
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V, 0.9 OHM 3 TO-92 T/R ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | VP2206N3-G-P003 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 640 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 450 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-226-3, TO-92-3 |
| Power Dissipation (Max) [Max] | 740 mW |
| Rds On (Max) @ Id, Vgs | 900 mOhm |
| Supplier Device Package | TO-92-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.67 | |
| 25 | $ 2.23 | |||
| 100 | $ 2.03 | |||
| Tape & Reel (TR) | 2000 | $ 2.03 | ||
| Microchip Direct | T/R | 1 | $ 2.67 | |
| 25 | $ 2.23 | |||
| 100 | $ 2.03 | |||
| 1000 | $ 1.68 | |||
| 5000 | $ 1.55 | |||
| 10000 | $ 1.44 | |||
| Newark | Each (Supplied on Full Reel) | 100 | $ 2.09 | |
Description
General part information
VP2206 Series
VP2206 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
