Specification	FCPF600N60ZL1

Current - Continuous Drain (Id) @ 25°C	7.4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1120 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	28 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

FCPF600N65S3R0L-F154 Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, TO-220F Ultra narrow lead

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max)	Power Dissipation (Max)
ON Semiconductor FCPF600N60ZL1	10 V	26 nC	7.4 A	TO-220-3 Full Pack	N-Channel	600 mOhm	650 V	Through Hole	28 W	1120 pF	TO-220F-3	3.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V
ON Semiconductor FCPF600N65S3R0L-F154	10 V	11 nC	6 A	TO-220-3 Full Pack	N-Channel	600 mOhm	650 V	Through Hole		465 pF	TO-220F-3	4.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	24 W
ON Semiconductor FCPF600N60ZL1-F154		26 nC	7.4 A	TO-220-3 Full Pack	N-Channel	600 mOhm	600 V	Through Hole	28 W	1120 pF	TO-220F	3.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FCPF600N65S3R0L-F154 Series

SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.