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FCPF600N65S3R0L-F154 Series

Power MOSFET, N-Channel, SUPERFET<sup>®</sup> III, Easy Drive, 650 V, 6 A, 600 mΩ, TO-220F Ultra narrow lead

Manufacturer: ON Semiconductor

Catalog

Power MOSFET, N-Channel, SUPERFET<sup>®</sup> III, Easy Drive, 650 V, 6 A, 600 mΩ, TO-220F Ultra narrow lead

Key Features

700 V @ TJ= 150oC
Low Effective Output Capacitance (Typ. Coss(eff.)= 127 pF)
Ultra Low Gate Charge (Typ. Qg= 11 nC)
Optimized Capacitance
100% Avalanche Tested
RoHS Compliant
Typ. RDS(on)= 474 mΩ
Internal Gate Resistance: 0.9 Ω

Description

AI
SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.