FCPF600N65S3R0L-F154 Series
Power MOSFET, N-Channel, SUPERFET<sup>®</sup> III, Easy Drive, 650 V, 6 A, 600 mΩ, TO-220F Ultra narrow lead
Manufacturer: ON Semiconductor
Catalog
Power MOSFET, N-Channel, SUPERFET<sup>®</sup> III, Easy Drive, 650 V, 6 A, 600 mΩ, TO-220F Ultra narrow lead
Key Features
• 700 V @ TJ= 150oC
• Low Effective Output Capacitance (Typ. Coss(eff.)= 127 pF)
• Ultra Low Gate Charge (Typ. Qg= 11 nC)
• Optimized Capacitance
• 100% Avalanche Tested
• RoHS Compliant
• Typ. RDS(on)= 474 mΩ
• Internal Gate Resistance: 0.9 Ω
Description
AI
SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.