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SOT8002-1
Discrete Semiconductor Products

PXP8R3-20QXJ

Active
Nexperia USA Inc.

20 V, P-CHANNEL TRENCH MOSFET

SOT8002-1
Discrete Semiconductor Products

PXP8R3-20QXJ

Active
Nexperia USA Inc.

20 V, P-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPXP8R3-20QXJ
Current - Continuous Drain (Id) @ 25°C12.4 A, 65.1 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]91.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]6200 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)50 W
Power Dissipation (Max)1.8 W
Rds On (Max) @ Id, Vgs8.3 mOhm
Supplier Device PackageMLPAK33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.70
10$ 0.60
100$ 0.42
500$ 0.35
1000$ 0.30
Digi-Reel® 1$ 0.70
10$ 0.60
100$ 0.42
500$ 0.35
1000$ 0.30
N/A 4364$ 1.36
Tape & Reel (TR) 3000$ 0.27
6000$ 0.25
9000$ 0.24
15000$ 0.24

Description

General part information

PXP8R3-20QX Series

P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.