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20 V, P-channel Trench MOSFET
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P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Power Dissipation (Max) | Power Dissipation (Max) | Vgs (Max) | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 20 V | 12.4 A 65.1 A | MLPAK33 | 50 W | 1.8 W | 12 V | MOSFET (Metal Oxide) | 6200 pF | P-Channel | 1.25 V | 2.5 V | 4.5 V | 150 °C | -55 °C | 91.8 nC | 8.3 mOhm | Surface Mount | 8-PowerVDFN |