Discrete Semiconductor Products

IRFB9N60A

Obsolete

MOSFET N-CH 600V 9.2A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 9.2A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB9N60A

Current - Continuous Drain (Id) @ 25°C	9.2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	170 W
Rds On (Max) @ Id, Vgs	750 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division IRFB9N60A	600 V	MOSFET (Metal Oxide)	N-Channel	9.2 A	10 V 49 nC	TO-220-3	4 V	Through Hole	TO-220AB	750 mOhm	1400 pF	-55 °C	150 °C	30 V	170 W	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB

Technical documentation and resources