IRFB9N60 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 600V 9.2A TO220AB
| Part | Drain to Source Voltage (Vdss) | Technology | FET Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Vgs(th) (Max) @ Id | Mounting Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 600 V | MOSFET (Metal Oxide) | N-Channel | 9.2 A | 10 V 49 nC | TO-220-3 | 4 V | Through Hole | TO-220AB | 750 mOhm | 1400 pF | -55 °C | 150 °C | 30 V | 170 W | 10 V |