Discrete Semiconductor Products

SCT3080ARC14

NRND

SIC MOSFETS 650V NCH SIC TRENCH MOSFET IN 4PIN PACKAGE - SCT3080AR IS A TRENCH GATE STRUCTURE SIC MOSFET IDEAL FOR SERVER POWER SUPPLIES, SOLAR INVERTERS, AND ELECTRIC VEHICLE CHARGING STATIONS. A 4PIN PACKAGE THAT SEPARATES THE POWER SOURCE TERMINAL AND DRIVER

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DocumentsTechnical Data Sheet EN Product Change Notice EN

Discrete Semiconductor Products

SCT3080ARC14

NRND

Rohm Semiconductor

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DocumentsTechnical Data Sheet EN Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT3080ARC14

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	571 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-4
Power Dissipation (Max)	134 W
Rds On (Max) @ Id, Vgs	104 mOhm
Supplier Device Package	TO-247-4L
Vgs(th) (Max) @ Id	5.6 V

SCT3080 Series

650V, 30A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Technology	Power Dissipation (Max)	Qualification	Grade
Rohm Semiconductor SCT3080AW7TL	5.6 V	TO-263-7	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Surface Mount	104 mOhm	29 A	175 °C	650 V	48 nC	571 pF	N-Channel
Rohm Semiconductor SCT3080KRC14	5.6 V	TO-247-4L	TO-247-4	Through Hole	104 mOhm	31 A	175 °C	1.2 kV			N-Channel	18 V	785 pF	60 nC	165 W
Rohm Semiconductor SCT3080ARC15	5.6 V	TO-247-4L	TO-247-4	Through Hole	104 mOhm	30 A	175 °C	650 V	48 nC	571 pF	N-Channel	18 V				SiC (Silicon Carbide Junction Transistor)	134 W
Rohm Semiconductor SCT3080ARC14	5.6 V	TO-247-4L	TO-247-4	Through Hole	104 mOhm	30 A	175 °C	650 V	48 nC	571 pF	N-Channel	18 V					134 W
Rohm Semiconductor SCT3080ALGC11	5.6 V	TO-247N	TO-247-3	Through Hole	104 mOhm	30 A	175 °C	650 V	48 nC	571 pF	N-Channel	18 V					134 W
Rohm Semiconductor SCT3080KW7TL	5.6 V	TO-263-7	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Surface Mount	104 mOhm	30 A	175 °C	1.2 kV			N-Channel		785 pF	60 nC	159 W
Rohm Semiconductor SCT3080ARHRC15	5.6 V	TO-247-4L	TO-247-4	Through Hole	104 mOhm	30 A	175 °C	650 V	48 nC	571 pF	N-Channel	18 V				MOSFET (Metal Oxide)	134 W	AEC-Q101	Automotive
Rohm Semiconductor SCT3080KRHRC15	5.6 V	TO-247-4L	TO-247-4	Through Hole	104 mOhm	31 A	175 °C	1.2 kV			N-Channel	18 V	785 pF	60 nC	165 W	MOSFET (Metal Oxide)		AEC-Q101	Automotive
Rohm Semiconductor SCT3080KRC15	5.6 V	TO-247-4L	TO-247-4	Through Hole	104 mOhm	31 A	175 °C	1.2 kV			N-Channel	18 V	785 pF	60 nC	165 W	SiC (Silicon Carbide Junction Transistor)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	249	$ 20.22
	Tube	1	$ 17.33
		30	$ 11.46
Mouser	N/A	1	$ 13.78
		10	$ 13.34
		25	$ 11.46
		240	$ 11.45
Newark	Each	1	$ 14.29
		10	$ 12.96
		25	$ 11.92
		60	$ 11.92
		120	$ 11.91
		270	$ 11.91

Description

General part information

SCT3080 Series

SCT3080KR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Product Change Notice EN

Datasheet